Femtoblue
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Based on advanced group-III nitride epitaxial growth and device fabrication techniques, we have developed novel InGaN/GaN laser diode structures producing femtosecond pulses in the Dicke superradiance and modelocking regimes.
To achieve this goal we have investigated several group III-nitride heterostructures and optical cavity designs operating in three different dynamic regimes.
This new technology will lay the foundation for miniature portable femtosecond lasers in the blue-violet that will replace traditional sources like mode-locked frequency doubled Ti: Sapphire lasers, Xenon and dye lasers. It will enable numerous new techniques and developments in the fields of ultrafast optical spectroscopy, high-resolution lithography, quantum optics, optical comb frequency standards, fluorescence decay analysis and biomedical diagnostic to be used without bulky laboratory installations.
The research has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013, Future and Emerging Technologies - FET) under grant agreement n° 238556.
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The goal of the project is to create a new technology base for ultrafast semiconductor laser diode devices producing femtosecond optical pulses in the blue and violet spectral range.
Following the final review of the project held in Neuchatel on the 30th November 2012 and the conclusion of external experts, the project turned out to be highly successful and brought both important scientific results and technological progress. The project has achieved most of its objectives and technical goals.
